MDP9N50F

MDP9N50F N-channel MOSFET 500V MDP9N50F N-Channel MOSFET 500V, 8.0 A, 0.9Ω General Description The MDP9N50F uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP9N50F is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 8.0A @VGS = 10V  RDS(ON) ≤ 0.9Ω @VGS = 10V Applications  Power Supply  HID  Lighting GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug. 2021 Version 1.1 1 Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Symbol RθJA RθJC Rating 500 ±30 8.0 4.8 32 119 0.95 4.5 300 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Rating 62.5 1.05 Unit oC/W Magnachip Semiconductor Ltd. MDP9N50F N-channel MOSFET 500V Ordering Information Part Number MDP9N50FTH Marking MDP9N50F Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 500 Gate Threshold Voltage VGS(th...