Document
MBQ40T65QES 650V Field Stop IGBT
General Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality.
MBQ40T65QES
650V Field Stop IGBT
Features
High Speed Switching & Low Power Loss VCE(sat) = 1.8V @ IC = 40A Maximum junction temperature 175°C
Applications
Inverters Welding converters High range switching frequency converters
TO-247
GCE
Maximum Rating
Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current limited by Tvjmax Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage Power dissipation Operating Junction temperature range Storage temperature range
TC=25°C TC=100°C
TC=25°C TC=100°C
TC=25°C TC=100°C
Symbol VCE IC ICpuls IF IFpuls VGE PD Tvj Tstg
Rating 650 80 40 120 40 20 120 ±20 230 115
-40~175 -55~150
Unit V A A A
A
A V W W °C °C
Thermal Characteristic
Parameter Thermal resistance junction-to-ambient Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode
Symbol RθJA RθJC RθJC
Rating 40 0.65 1.75
Unit °C/W
Jul. 2021. Version 1.2
1
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Ordering Information
Part Number MBQ40T65QESTH
Marking 40T65QES
Temp. Range -55~150°C
Package TO-247
Packing Tube
RoHS Status Halogen Free
Electrical Characteristic (Tvj = 25°C unless otherwise specified)
Parameter Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Dynamic Characteristic Total gate charge Gate-emitter charge Gate-collector charge Input capacitance Reverse transfer capacitance Output capacitance Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery time Reverse recovery current Reverse recovery charge
Symbol
Conditions
Min
BVCES IC = 2mA, VGE = 0V
650
Tvj = 25°C
-
VCE(sat) IC = 40A, VGE= 15V
Tvj = 175°C -
Tvj = 25°C
-
VF
VGE = 0V, IF = 20A
Tvj = 175°C -
VGE(th) VCE = VGE, IC = 40mA
3.5
ICES
VCE = 650V, VGE = 0V, Tvj = 25°C
-
IGES
VGE = 20V, VCE = 0V
-
Qg
-
Qge
VCE = 520V, IC = 40A, VGE = 15V
-
Qgc
-
Cies
-
Cres
VCE = 25V, VGE = 0V, f = 1MHz
-
Coes
-
td(on)
-
tr
-
td(off)
VGE = 15V, VCC = 400V,
-
tf
IC = 40A, RG = 10Ω,
-
Eon
Inductive Load, Tvj = 25°C
-
Eoff
-
Ets
-
td(on)
-
tr
-
td(off)
VGE = 15V, VCC = 400V,
-
tf
IC = 40A, RG = 10Ω,
-
Eon
Inductive Load, Tvj = 175°C
-
Eoff
-
Ets
-
trr
-
Irr
IF = 20A, diF/dt = 820A/ μs, Tvj = 25°C
-
Qrr
-
trr
-
Irr
IF = 20A, diF/dt = 820A/ μs, Tvj = 175°C
-
Qrr
-
Typ
1.8 2.3 1.5 1.5 5.0
-
60 13 25 1565 37 120
6 36 55 64 0.5 0.4 0.9 7 41 60 102 1.04 0.57 1.61 60 18 696 72 22 864
Max Unit
-
V
2.3 V
-
1.95 V
-
6.5
V
40
μA
±100 nA
-
-
nC
-
-
-
pF
-
-
ns
-
-
-
-
mJ
-
-
ns
-
-
-
-
mJ
-
-
ns
-
A
-
nC
-
ns
-
A
-
nC
Jul. 2021. Version 1.2
2
Magnachip Semiconductor Ltd.
Jul. 2021. Version 1.2
3
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
4
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
5
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
6
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
MBQ40T65QES 650V Field Stop IGBT
Physical Dimension
TO-247
Dimensions are in millimeters, unless otherwise specified
E
A
A2
ΦP D1
E2 Q
D S
L L1
b2
b1
b
E1
Jul. 2021. Version 1.2
e
c A1
Dimension A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 ΦP Q S
Min(mm) 4.70 2.20 1.50 0.99 2.59 1.65 0.38 20.30 13.08 15.45 13.06 4.32
19.81 -
3.50 5.38
Max(mm) 5.31 2.60 2.49 1.40 3.43 2.39 0.89 21.46 16.26 14.02 5.49
5.45BSC 20.57 4.50 3.70 6.20
6.15BSC
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.
7
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Magnachip reserves the right to change the specifications and circuitry without notice at any .