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MBQ40T65QES Dataheets PDF



Part Number MBQ40T65QES
Manufacturers MagnaChip
Logo MagnaChip
Description IGBT
Datasheet MBQ40T65QES DatasheetMBQ40T65QES Datasheet (PDF)

MBQ40T65QES 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality. MBQ40T65QES 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.8V @ IC = 40A  Maximum junction temperature 175°C Applications  Inverters  Welding converters  High range switching frequency converters TO-247 GCE Maximum Rating Parameter Collector-emitter voltage .

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MBQ40T65QES 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality. MBQ40T65QES 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.8V @ IC = 40A  Maximum junction temperature 175°C Applications  Inverters  Welding converters  High range switching frequency converters TO-247 GCE Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current limited by Tvjmax Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage Power dissipation Operating Junction temperature range Storage temperature range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Symbol VCE IC ICpuls IF IFpuls VGE PD Tvj Tstg Rating 650 80 40 120 40 20 120 ±20 230 115 -40~175 -55~150 Unit V A A A A A V W W °C °C Thermal Characteristic Parameter Thermal resistance junction-to-ambient Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode Symbol RθJA RθJC RθJC Rating 40 0.65 1.75 Unit °C/W Jul. 2021. Version 1.2 1 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Ordering Information Part Number MBQ40T65QESTH Marking 40T65QES Temp. Range -55~150°C Package TO-247 Packing Tube RoHS Status Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Dynamic Characteristic Total gate charge Gate-emitter charge Gate-collector charge Input capacitance Reverse transfer capacitance Output capacitance Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery time Reverse recovery current Reverse recovery charge Symbol Conditions Min BVCES IC = 2mA, VGE = 0V 650 Tvj = 25°C - VCE(sat) IC = 40A, VGE= 15V Tvj = 175°C - Tvj = 25°C - VF VGE = 0V, IF = 20A Tvj = 175°C - VGE(th) VCE = VGE, IC = 40mA 3.5 ICES VCE = 650V, VGE = 0V, Tvj = 25°C - IGES VGE = 20V, VCE = 0V - Qg - Qge VCE = 520V, IC = 40A, VGE = 15V - Qgc - Cies - Cres VCE = 25V, VGE = 0V, f = 1MHz - Coes - td(on) - tr - td(off) VGE = 15V, VCC = 400V, - tf IC = 40A, RG = 10Ω, - Eon Inductive Load, Tvj = 25°C - Eoff - Ets - td(on) - tr - td(off) VGE = 15V, VCC = 400V, - tf IC = 40A, RG = 10Ω, - Eon Inductive Load, Tvj = 175°C - Eoff - Ets - trr - Irr IF = 20A, diF/dt = 820A/ μs, Tvj = 25°C - Qrr - trr - Irr IF = 20A, diF/dt = 820A/ μs, Tvj = 175°C - Qrr - Typ 1.8 2.3 1.5 1.5 5.0 - 60 13 25 1565 37 120 6 36 55 64 0.5 0.4 0.9 7 41 60 102 1.04 0.57 1.61 60 18 696 72 22 864 Max Unit - V 2.3 V - 1.95 V - 6.5 V 40 μA ±100 nA - - nC - - - pF - - ns - - - - mJ - - ns - - - - mJ - - ns - A - nC - ns - A - nC Jul. 2021. Version 1.2 2 Magnachip Semiconductor Ltd. Jul. 2021. Version 1.2 3 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 4 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 5 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 6 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT MBQ40T65QES 650V Field Stop IGBT Physical Dimension TO-247 Dimensions are in millimeters, unless otherwise specified E A A2 ΦP D1 E2 Q D S L L1 b2 b1 b E1 Jul. 2021. Version 1.2 e c A1 Dimension A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 ΦP Q S Min(mm) 4.70 2.20 1.50 0.99 2.59 1.65 0.38 20.30 13.08 15.45 13.06 4.32 19.81 - 3.50 5.38 Max(mm) 5.31 2.60 2.49 1.40 3.43 2.39 0.89 21.46 16.26 14.02 5.49 5.45BSC 20.57 4.50 3.70 6.20 6.15BSC Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. 7 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any .


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