MMQ60R115PC

MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115Ω N-channel MOSFET  Description MMQ60R115PC is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.115 3 33 77 Unit V Ω V A nC GDS D G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMQ60R115PCTH 60R115PC Temp. Range -55 ~ 150℃ Package TO-247 May. 2021 Revision 1.2 1d Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd. MMQ60R115PC Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Symbol VDSS VGSS ID IDM PD EAS dv/dt dv/dt Tstg Tj Ratin...