MBQ40T120QESTH

MBQ40T120QESTH High Speed 1200V Field Stop Trench IGBT MBQ40T120QESTH High speed FieldStop Trench IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Applications  Welder Features  High Speed Switching & Low Power Loss  VCE(sat) = 2.1V @ IC = 40A  High Input Impedance  trr = 285ns (typ.)  Ultra-Soft, fast recovery anti-parallel diode  Ultra-narrowed VF distribution control  Positive Temperature coefficient for easy paralleling TO-247  G : Gate  C : Collector  E : Emitter GC E Absolute Maximum Ratings Package outline and symbol Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tjvjmax Diode forward current, limited by Tvjmax Diode pulsed current, Pulse time limited by Tjmax Power dissipation Short circuit withstand time VCE = 500V, VGE = 15V, TC = 150°C Operating Junction temperature range Storage temperature range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Symbol VCES VGE IC ICpuls IF IFpuls PD tSC Tvj Tstg Thermal Characteristics Characteristics Thermal resistance junction-to-ambient Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode Symbol Rth(j-a) Rth(j-c) Rth(j-c) Jul. 2021. Revision 1.2 1 Rating 1200 ±20 80 40 160 80 40 1...