MMF60R580RZ

MMF60R580RZ Datasheet MMF60R580RZ 600V 0.58Ω N-channel MOSFET  Description MMF60R580RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device combines improvement of switching speed with effective switching behavior. And it also will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 12.8 Unit V Ω V A nC G DS  Features  Low Power Loss by High Speed Switching and Low On-Resistance  Excellent ESD robustness  100% Avalanche Tested  Green Package-Pb Free Plating, Halogen Free  Zener-Integrated  Applications  PFC Power Supply Stages  Switching Applications  Adapter  DC-DC Converters  Ordering Information Order Code Marking Temp. Range MMF60R580RZTH 60R580RZ -55 ~ 150oC Package TO-220F Packing Tube RoHS Status Compliant Dec. 2021 Revision 1.0 1 Magnachip Semiconductor Ltd. MMF60R580RZ Datasheet  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Drain - Source voltage Gate - Source voltage Symbol VDSS VGSS Continuous drain current (1) ID Pulsed drain current (2) Power dissipation Single - pulse avalanche energy (3) MOSFET dv/dt ruggedness Diode dv/dt ruggedness (4) Storage temperature Maximum operatin...