EGP10A

High Efficiency Rectifier 1.0 A Glass Passivated EGP10A - EGP10K Features Superfast Recovery Time for High Efficiency Low Forward Voltage, High Current Capability Low Leakage Current High Surge Current Capability www.onsemi.com ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Units IO If(surge) Average Rectified Current 0.375 ” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mW°C IC Thermal Resistance, Junction to Ambient 50 °C/W TJ, TSTG Junction and Storage Temperature Range −65 ~ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. AXIAL LEAD / DO−41 CASE 017AH MARKING DIAGRAM EGP10K $Y&Z&3 EGP10K $Y &Z &3 = Specific Device Code = ON Semiconductor Logo = Assembly Code = Date Code ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Device Parameter 10A 10B 10C 10D 10F 10G 10J 10K Units Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400...