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EGP10F Dataheets PDF



Part Number EGP10F
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High-Efficiency Rectifier
Datasheet EGP10F DatasheetEGP10F Datasheet (PDF)

DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load.

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DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. AXIAL LEAD / DO−41 CASE 017AH MARKING DIAGRAM EGP10X ZYWW EGP10X Z YWW = Specific Device Code X = B/C/D/F/G/K = Assembly Code = Date Code (Year & Week) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Device Parameter 10B 10C 10D 10F 10G 10K Unit Peak Repetitive Reverse Voltage 100 150 200 300 400 800 V Maximum RMS Voltage 70 105 140 210 280 560 V DC Reverse Voltage (Rated VR) 100 150 200 300 400 800 V Maximum Reverse TA = 25_C 5.0 mA Current at Rated VR TA = 125_C 100 mA Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 nS Maximum Forward Voltage @ 2.0 A 0.95 1.25 1.7 V Typical Junction Capacitance 22 VR = 4.0 V, f = 1.0 MHz 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.  Semiconductor Components Industries, LLC, 2007 1 October, 2022 − Rev. 2 Publication Order Number: EGP10K/D Forward Current (A) Forward Current (A) EGP10B − EGP10K TYPICAL PERFORMANCE CHARACTERISTICS 1 0.75 0.50 Single Phase Half Wave 60 Hz Resistive or 0.25 Inductive LOAD .375” (9.0 mm) LEAD Lengths 0 25 50 75 100 125 150 175 Ambient Temperature (5C) Figure 1. Forward Current Derating Curve Peak Forward Surge Current (A) 30 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles at 60 Hz Figure 2. Non−Repetitive Surge Current 50 TA = 150C 10 EGP10B−EGP10D 1 TA = 25C 0.1 EGP10F−EGP10K Pulse Width = 30 ms 2% Duty Cycle 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) Figure 3. Forward Characteristics Reverse Current (mA) 1000 100 TA = 125C 10 1 TA = 100C 0.1 0.01 0 TA = 25C 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 4. Reverse Characteristics 60 50 40 30 EGP10B−EGP10D 20 10 EGP10F−EGP10K 0 0.1 1 10 100 Reverse Voltage (V) Figure 5. Junction Capacitance 1000 Capacitance (pF) www.onsemi.com 2 EGP10B − EGP10K Reverse Recovery Time Characteristic and Test Circuit Diagram 50 W Non−inductive 50 W Non−inductive trr +0.5 A + 50 V − (approx.) 50 W Non−inductive DUT (−) Pulse Generator (Note 2) Oscilloscope (+) (Note 1) Notes: 1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF. 2. Rise time = 10 ns max; Source impedance = 50 W. Figure 6. Test Circuit Diagram 0 −0.25 A −1 A 1 cm Set Time Base for 5/10 ns/cm Figure 7. Reverse Recovery Time Characteristics ORDERING INFORMATION Device Package Shipping† EGP10B EGP10C Axial Lead / DO−41 (Pb−Free) 5000 / Tape & Reel EGP10D EGP10F EGP10G EGP10K †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD / DO−41 CASE 017AH ISSUE O 25.40 MIN (2X) 5.20 4.06 DATE 31 AUG 2016 0.86 0.71 2.72 2.03 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO−204 VARIATION AL. B) PACKAGE BODY CAN BE PLASTIC OR HERMETICALLY SEALED GLASS. C) ALL DIMENSIONS ARE IN MILLIMETERS. DOCUMENT NUMBER: 98AON13444G DESCRIPTION: AXIAL LEAD / DO−41 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the ri.


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