EGP10G

DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. AXIAL LEAD / DO−41 CASE 017AH MARKING DIAGRAM EGP10X ZYWW EGP10X Z YWW = Specific Device Code X = B/C/D/F/G/K = Assembly Code = Date Code (Year & Week) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Device Parameter 10B 10C 10D 10F 10G 10K Unit Peak Repetitive Reverse Voltage 100 150 200 300 400 800 V Maximum RMS Voltage 70...