High-Efficiency Rectifier
DATA SHEET www.onsemi.com
Rectifier, High Efficiency, Glass Passivated, 1.0 A
EGP10B - EGP10K
Features
Superfast Re...
Description
DATA SHEET www.onsemi.com
Rectifier, High Efficiency, Glass Passivated, 1.0 A
EGP10B - EGP10K
Features
Superfast Recovery Time for High Efficiency Low Forward Voltage, High Current Capability Low Leakage Current High Surge Current Capability
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Value
Unit
IO If(surge)
Average Rectified Current 0.375” lead length @ TL = 75_C
Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method)
1.0
A
30
A
PD Total Device Dissipation Derate above 25_C
2.5
W
17
mWC
IC
Thermal Resistance, Junction to Ambient
50
TJ, TSTG Junction and Storage Temperature Range −65~150
C/W C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
AXIAL LEAD / DO−41 CASE 017AH
MARKING DIAGRAM
EGP10X ZYWW
EGP10X
Z YWW
= Specific Device Code X = B/C/D/F/G/K
= Assembly Code = Date Code (Year & Week)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Device
Parameter
10B
10C
10D
10F
10G
10K
Unit
Peak Repetitive Reverse Voltage
100
150
200
300
400
800
V
Maximum RMS Voltage
70...
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