2SA2065 Datasheet

2SA2065 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2065 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) • High-speed switc.

Features

icant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2001-02 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collec.