BGA NAND
PN27G02A
BGA24 NAND Specification
2Gb (256M x 8), 3.3v, 8bit ECC NAND flash
Dec 4, 2019
Rev V0.4
Page 1
Revision History:
BGA NAND
PN27G02A
Rev.
V0.1 V0.2 V0.3 V0.4
Date
2016/12/8 2017/2/26 2017/12/11 2019/12/4
Changes
Initial release based on PN27G01ABGIT V0.1 Update ID table on page 23; ECC update from 8bit / 512byte to 8 bit/ 544byte ;ChCaonrgrecctormanpdaonmy “aPcacreasgso/ ns”eqtoue“XntTiaXl”access time
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Remark
Preliminary Preliminary
Revise Revise
NOTE: INFORMATION IN THIS PRODUCT SPECIFICATION IS SUBJECT TO CHANGE AT ANYTIME WITHOUT NOTICE, ALL PRODUCT SPECIFICATIONS ARE PROVIDED FOR REFERENCE ONLY.TO ANY INTELLECTUAL, PROPERTY RIGHTS IN XTX TECHNOLOGY LIMITED.ALL INFORMATION IN THIS DOCUMENT IS PROVIDED. Home page ( http://www.xtxtech.com); Technical Contact:
[email protected]
Dec 4, 2019
Rev V0.4
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BGA NAND
PN27G02A
General Description
The PN27G02A is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).
The PN27G02A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features
Single Level per Cell (SLC) Technology ECC requirement: 8bit/544Bytes Power Supply Voltage
Voltage range: 2.7V ~ 3.6V Organization
Page size: x8 (2048 + 128) bytes; 128- bytes spare area Block size: x8 (128k + 8k) bytes Plane size: 1024 Blocks per Plane 2008 block (min) ~2048 block (max) Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Access time
Cell array to register: 25µs (max) Serial Read Cycle: 25 ns (min) (CL=50pF) Program/Erase time Auto Page Program: 300 µs /page (typ.) Auto Block Erase: 3.5 ms/block( typ.) Reliability 10 Year Data retention (Typ)
Dec 4, 2019
Rev V0.4
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BGA NAND
Vendor PN : XTX
Product family 27G : 3.3v Nand
PN 27G 02A BG I T G
Nand Density/Org 02A : 2Gb /x8; 8bit ECC is required
Package type BG : BGA24
Temperature range I: Industrial (-40’C to 85’C)
PN27G02A
Green code G: Green/Reach package Packing type T: tray
Dec 4, 2019
Rev V0.4
Page 4
Pin Assignments
BGA NAND
PN27G02A
Dec 4, 2019
Rev V0.4
Page 5
Package Dimension
BGA NAND
PN27G02A
Dec 4, 2019
Rev V0.4
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Logic Diagram
BGA NAND
I/O1~I/O8
PN27G02A
.