Si2369DS

www.vishay.com Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: H9 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -6 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration 2 S -30 0.029 0.034 0.040 11.4 -7.6 Single FEATURES TrenchFET® power MOSFET 100 % Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS For mobile computing - Load switch S - Notebook adaptor switch - DC/DC converter G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2369DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range VDS VGS ID IDM IS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d t5s Maximum junction-to-foot (drain) Steady state Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W SYMBOL RthJA RthJF TYPICAL 75 40 LIMIT -30 ± 20 -7.6 -6.1 -5.4 b, c -4.3 b, c -80 -2.1 -1...