P-Channel MOSFET
www.vishay.com
Si2369DS
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
Marking code: H9
1 G Top V...
Description
www.vishay.com
Si2369DS
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
Marking code: H9
1 G Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -6 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration
2 S
-30 0.029 0.034 0.040 11.4 -7.6 Single
FEATURES TrenchFET® power MOSFET
100 % Rg tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
For mobile computing - Load switch
S
- Notebook adaptor switch
- DC/DC converter
G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SOT-23 Si2369DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
VDS VGS ID IDM IS
PD TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
t5s
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W
SYMBOL RthJA RthJF
TYPICAL 75 40
LIMIT -30 ± 20 -7.6 -6.1
-5.4 b, c -4.3 b, c
-80 -2.1 -1...
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