Si2367DS

www.vishay.com Si2367DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: H7 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) d Configuration 2 S -20 0.066 0.086 0.130 9 -3.8 Single FEATURES TrenchFET® power MOSFET 100 % Rg tested Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch for portable devices DC/DC converter S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2367DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed drain current (10 μs width) IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating junction and storage temperature range TJ, Tstg LIMIT -20 ±8 -3.8 -3 -2.8 a, b -2.2 a, b -15 -1.4 -0.8 a, b 1.7 1.1 0.96 a, b 0.62 a, b -55 to +150 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c t5s Maximum junction-to-foot (drain) Steady state Notes a. Surface mounted on 1" x 1" FR4 board b. t = 5 s c. Maximum under steady state conditions is 175 °C/W d. TC = 25 °C SYMB...