NTC160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, Bare Die NTC160N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Features 1200 V @ TJ = 175°C Typ RDS(on) = 160 mW at VGS = 20 V, ID = 10 A High Speed Switching with Low Capacitance 100% UIL Tested This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Applications Industrial Motor Drive UPS Boost Inverter PV Charger DATA SHEET www.onsemi.com V(BR)DSS 1200 V RDS(on) MAX 224 mW @ 20 V ID MAX 17 A N−CHANNEL MOSFET D G S DIE DIAGRAM G S1 S2 Die Information S Wafer Diameter S Die Size S Metallization ⋅ Top ⋅ Back S Die Thickness S Gate Pad Size 6 inch 2,070 x 2,420 mm Ti/TiN/Al Ti/NiV/Ag Typ. 200 mm 600 x 330 mm 5 mm © Semiconductor Components Industries, LLC, 2018 1 April, 2022 − Rev. 1 Publication Order Number: NTC160N120SC1/D Die Layout 2070 600 G 330 NTC160N120SC1 Die Cross Section Source 1 Source 2 N- Epic 2420 S1 S2 1417.5 N+ Substrate Source 3 Passivation (Polyimide) 601 601 Passivation Information − Passivation Material: Polymide (PSPI) − Passivation Typ...