Document
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free
Description
V(BR)DSS RDS(on) max. ID
IRFP250MPbF
IR MOSFET™
200V 0.075
30A
IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
G Gate
Base part number IRFP250MPbF
Package Type TO-247AD
Standard Pack
Form
Quantity
Tube
25
TO-247AD
D Drain
S Source
Orderable Part Number IRFP250MPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max. 30 21 120 214 1.4 ± 20 315 30 21 8.6
-55 to + 175
300 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
Thermal Resistance
RJC RCS RJA
Symbol
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ. ––– 0.24 –––
Max. 0.7 ––– 40
Units °C/W
1
2020-05-28
IRFP250MPbF
Electrical characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.075 VGS = 10V, ID = 18A
VGS(th) gfs IDSS
IGSS
Gate Threshold Voltage Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
17 ––– ––– S VDS = 50V, ID = 18A
––– –––
––– –––
25 250
µA
VDS = 200V, VGS = 0V VDS = 160V,VGS = 0V,TJ =150°C
––– –––
––– 100 ––– -100
nA
VGS = 20V VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– ––– 123
ID = 18A
––– ––– 21 nC .