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IRFP250MPbF Dataheets PDF



Part Number IRFP250MPbF
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IRFP250MPbF DatasheetIRFP250MPbF Datasheet (PDF)

Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP250MPbF IR MOSFET™ 200V 0.075 30A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™.

  IRFP250MPbF   IRFP250MPbF



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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP250MPbF IR MOSFET™ 200V 0.075 30A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. G Gate Base part number IRFP250MPbF Package Type TO-247AD Standard Pack Form Quantity Tube 25 TO-247AD D Drain S Source Orderable Part Number IRFP250MPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 30 21 120 214 1.4 ± 20 315 30 21 8.6 -55 to + 175 300 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance RJC RCS RJA Symbol Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.7 ––– 40 Units °C/W 1 2020-05-28 IRFP250MPbF Electrical characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.075  VGS = 10V, ID = 18A  VGS(th) gfs IDSS IGSS Gate Threshold Voltage Forward Trans conductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 17 ––– ––– S VDS = 50V, ID = 18A ––– ––– ––– ––– 25 250 µA VDS = 200V, VGS = 0V VDS = 160V,VGS = 0V,TJ =150°C ––– ––– ––– 100 ––– -100 nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time LD Internal Drain Inductance LS Internal Source Inductance ––– ––– 123 ID = 18A ––– ––– 21 nC .


60R190D1 IRFP250MPbF BSC057N08NS3


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