DatasheetsPDF.com

SMB10J30AH Dataheets PDF



Part Number SMB10J30AH
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Transient Voltage Suppressor
Datasheet SMB10J30AH DatasheetSMB10J30AH Datasheet (PDF)

SMB10J9.0(A)H – SMB10J40(A)H Taiwan Semiconductor 1000W, 9V - 40V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Low profile package ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT VWM.

  SMB10J30AH   SMB10J30AH



Document
SMB10J9.0(A)H – SMB10J40(A)H Taiwan Semiconductor 1000W, 9V - 40V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Low profile package ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT VWM VBR PPK TJ MAX Package 9 - 40 V 10 - 49.1 V 1000 W 175 °C DO-214AA (SMB) Configuration Single die APPLICATIONS ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.110g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Peak power dissipation at TA = 25°C, tp = 1ms(1) SYMBOL PPK Steady state power dissipation PD Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM Forward Voltage @ IF = 50A for Uni-directional only VF Junction temperature TJ Storage temperature TSTG Note: 1. Non-repetitive current pulse per Fig. 3 and derated above TA = 25°C per Fig. 2 VALUE 1000 5 100 3.5 -55 to +175 -55 to +175 Devices for Bipolar Applications 1. For bidirectional use CAH suffix UNIT W W A V °C °C 1 Version: A2102 SMB10J9.0(A)H – SMB10J40(A)H Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 20 100 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Device Device Marking Code Breakdown Voltage @ IT VBR (V) UNI BI UNI BI Min Max SMB10J9.0AH SMB10J9.0CAH 1KV KVC 10.0 11.1 SMB10J10AH SMB10J10CAH 1KX KXC 11.1 12.3 SMB10J11AH SMB10J11CAH 1KZ KZC 12.2 13.5 SMB10J12AH SMB10J12CAH 1LE LEC 13.3 14.7 SMB10J13AH SMB10J13CAH 1LG LGC 14.4 15.9 SMB10J14AH SMB10J14CAH 1LK LKC 15.6 17.2 SMB10J15AH SMB10J15CAH 1LM LMC 16.7 18.5 SMB10J16AH SMB10J16CAH 1LP LPC 17.8 19.7 SMB10J17AH SMB10J17CAH 1LR LRC 18.9 20.9 SMB10J18AH SMB10J18CAH 1LT LTC 20.0 22.1 SMB10J20AH SMB10J20CAH 1LV LVC 22.2 24.5 SMB10J22AH SMB10J22CAH 1LX LXC 24.4 26.9 SMB10J24AH SMB10J24CAH 1LZ LZC 26.7 29.5 SMB10J26AH SMB10J26CAH 1ME MEC 28.9 31.9 SMB10J28AH SMB10J28CAH 1MG MGC 31.1 34.4 SMB10J30AH SMB10J30CAH 1MK MKC 33.3 36.8 SMB10J33AH SMB10J33CAH 1MM MMC 36.7 40.6 SMB10J36AH SMB10J36CAH 1MP MPC 40.0 44.2 SMB10J40AH SMB10J40CAH 1MR MRC 44.4 49.1 Test Current IT (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Stand-Off Voltage VWM (V) 9 10 11 12 13 14 15 16.


SMB10J28AH SMB10J30AH SMB10J33AH


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)