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1T4G

Taiwan Semiconductor

Standard Rectifier

1T1G – 1T7G Taiwan Semiconductor 1A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● Low forw...


Taiwan Semiconductor

1T4G

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Description
1T1G – 1T7G Taiwan Semiconductor 1A, 50V - 1000V Standard Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● High current capability ● High reliability ● High surge current capability ● 3mm miniature body ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM IFSM TJ MAX Package 1 A 50 - 1000 V 30 A 150 °C TS-1 Configuration Single die MECHANICAL DATA ● Case: TS-1 ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.200g (approximately) TS-1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1T1G 1T2G 1T3G 1T4G 1T5G 1T6G 1T7G UNIT Marking code on the device 1T1G 1T2G 1T3G 1T4G 1T5G 1T6G 1T7G Repetitive peak reverse voltage Reverse voltage, total rms value VRRM VR(RMS) 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Forward current IF Surge peak forward current, 8.3ms single half sine wave superimposed IFSM on rated load Junction temperature TJ 1 A 30 A -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: H2104 1T1G – 1T7G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 100 UNIT °C/W ELECTRICAL SPECIFICATIONS...




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