Ultra-Fast Rectifier
ESH1B – ESH1D
Taiwan Semiconductor
1A, 100V - 200V Ultra Fast Surface Mount Rectifier
FEATURES
● Glass passivated chip...
Description
ESH1B – ESH1D
Taiwan Semiconductor
1A, 100V - 200V Ultra Fast Surface Mount Rectifier
FEATURES
● Glass passivated chip junction ● Ideal for automated placement ● Low profile package ● Ultra Fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
1
A
100 - 200 V
IFSM TJ MAX Package
30
A
175
°C
DO-214AC (SMA)
Configuration
Single die
MECHANICAL DATA
● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.060g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
ESH1B ESH1C ESH1D
Marking code on the device
ESH1B ESH1C ESH1D
Repetitive peak reverse voltage
VRRM
100
150
200
Reverse voltage, total rms value
VR(RMS)
70
105
140
Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature
Storage temperature
IF IFSM TJ TSTG
1 30 - 55 to +175 - 55 to +175
UNIT
V V A A °C °C
1
Version: F2102
ESH1B – ESH1D
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance Juncti...
Similar Datasheet