BSC005N03LS5
MOSFET
OptiMOSTM5Power-Transistor,30V
Features
•Verylowon-resistanceRDS(on)@VGS=4.5V •Optimize...
BSC005N03LS5
MOSFET
OptiMOSTM5Power-
Transistor,30V
Features
Verylowon-resistanceRDS(on)@VGS=4.5V Optimizedchargesforfastswitching OptimizedQGD/QGSforinducedturnonruggedness Superiorthermalresistance N-channel 100%avalanchetested Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.55
mΩ
ID
433
A
Qoss
70
nC
QG(0V..4.5V)
59
nC
PG-TDSON-8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode BSC005N03LS5
Package PG-TDSON-8 FL
Marking 05N03LS5
RelatedLinks -
Final Data Sheet
1
Rev.2.2,2022-10-24
OptiMOSTM5Power-
Transistor,30V
BSC005N03LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....