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2SK3879 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3879 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3879
FEATURES ·Drain Current : ID= 6. 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 1. 7Ω(Max) ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation DESCRIPTION ·m otor drive, DC-DC converter, power swit ch and solenoid drive. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 800 V VGS Gate-Source Voltage-Con tinuous ±30 V ID Drain Current-Con tinuous 6. 5 A IDM Drain Current-Sin gle Pluse 19. 5 A PD To . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3879 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3879
FEATURES ·Drain Current : ID= 6. 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 1. 7Ω(Max) ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation DESCRIPTION ·m otor drive, DC-DC converter, power swit ch and solenoid drive. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 800 V VGS Gate-Source Voltage-Con tinuous ±30 V ID Drain Current-Con tinuous 6. 5 A IDM Drain Current-Sin gle Pluse 19. 5 A PD To . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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