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2SK3892 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3892 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3892
FEATURES ·Drain Current : ID= 22A@ T C=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 62mΩ(Max) ·100% av alanche tested ·Minimum Lot-to-Lot var iations for robust device
performance a nd reliable operation
DESCRIPTION ·mo tor drive, DC-DC converter, power switc h
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Cont inuous ±30 V ID Drain Current-Cont inuous 22 A IDM Drain Current-Singl e Pluse 88 A PD Total . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3892 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3892
FEATURES ·Drain Current : ID= 22A@ T C=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 62mΩ(Max) ·100% av alanche tested ·Minimum Lot-to-Lot var iations for robust device
performance a nd reliable operation
DESCRIPTION ·mo tor drive, DC-DC converter, power switc h
and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Cont inuous ±30 V ID Drain Current-Cont inuous 22 A IDM Drain Current-Singl e Pluse 88 A PD Total . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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