isc N-Channel MOSFET Transistor
2SK3899-ZK
FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V...
isc N-Channel MOSFET
Transistor
2SK3899-ZK
FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
84
A
IDM
Drain Current-Single Pluse
336
A
PD
Total Dissipation @TC=25℃
146
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.856
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 1mA
VDS= 10V; ID= 1mA VGS= 10V; ID= 42A VGS= 4V; ID= 42A VGS= ±20V;VDS= 0
VDS= 60V; VGS= 0
IS= 84A; VGS= 0
2SK3899-ZK
MIN MAX UNIT
60
--
V
1.5
2.5
V
--
5.3 6.5
mΩ
--
±10
uA
--
10
uA
--
1.5
V
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