2SK3905 | Inchange Semiconductor
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
2SK3905
FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.31Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS.
- 2SK3905 | Inchange Semiconductor
- N-Channel MOSFET Transistor
- isc N-Channel MOSFET Transistor
2SK3905
FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Vo.
- isc N-Channel MOSFET Transistor
2SK3905
FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.31Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Dr.
- 2SK3905 | Toshiba Semiconductor
- N-Channel MOSFET
- www.DataSheet4U.com
2SK3905
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
.
- www.DataSheet4U.com
2SK3905
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3905
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source .