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2SK3906 Data Sheet

N-Channel MOSFET Transistor

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2SK3906
isc N-Channel MOSFET Transistor 2SK3906 FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D.
2SK3906

Download 2SK3906 Datasheet
isc N-Channel MOSFET Transistor 2SK3906 FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.833 UNIT ℃/W isc websi.



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