2SK3915-01MR

2SK3915-01MR FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220F Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Symbol VDS VDSX ID ID(puls] VGS IAR Ratings 450 450 6 ±24 ±30 6 Unit V V A A V A Remarks VGS=-30V Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range EAS dVDS/dt dV/dt PD Tch Tstg 320 mJ Note *2 3.2 20 5 2.16 32 +150 -55 to +150 mJ Note *3 kV/μs VDS <= 450V kV/μs Note *4 W Ta=25°C W Tc=25°C °C °C Isolation voltage VISO *6 2 kVrms t=60sec, f=60Hz Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=6A, L=102mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc <= BVDSS, Tch =<150°C Electrical characteristics (Tc =25°C unless otherwise specified) Equivalent circuit sch...