2SK3920-01 FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features High speed switching N...
2SK3920-01 FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching
regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive
VDS VDSX ID ID(puls] VGS IAR
120 90 67
±268 ±30 67
V V VGS=-30V A A V A Note *1
Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation
Operating and storage
EAS
dVDS/dt dV/dt PD
Tch
719.1
27.0 20
5 2.02 270 +150
mJ Note *2
mJ Note *3 kV/μs VDS <=120V kV/μs Note *4 W Ta=25°C W Tc=25°C °C
temperature range
Tstg
-55 to +150 °C
Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drai...