2SK3927-01SJ

2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 250 V Equivalent circuit schematic Drain(D) VDSX 220 V VGS=-30V Continuous Drain Current ID 34 A Pulsed Drain Current ID(puls] ±136 A Gate-Source Voltage VGS ±30 V Gate(G) Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range IAR EAS EAR dVDS/dt dV/dt -di/dt PD Tch Tstg 34 665.7 A Note *1 mJ Note *2 27 mJ Note *3 20 5 100 270 2.02 +150 -55 to +150 kV/µs VDS=< 250V kV/µs Note *4 A/µs Note *5 W Tc=25°C Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Source(S) Note *1:Tch =< 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=14A,L=5.71mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘...