2SK3933-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No...
2SK3933-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching
regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings (mm) 200406 See to P4
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
500
VDSX
500
Continuous Drain Current
ID
11
Pulsed Drain Current
ID(puls]
±44
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
11
Non-Repetitive
EAS
453.9
Maximum Avalanche Energy
Repetitive
EAR
16.5
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
165
1.67
Operating and Storage
Tch
+150
Temperature range
Tstg
-55 to +150
Unit V V A A V A mJ
Remarks VGS=-30V
Note *1 Note *2
mJ Note *3
kV/µs VDS=< 500V kV/µs Note *4 W Tc=25°C
Ta=25°C
°C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch =< 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,
VCC=50V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ grap...