isc N-Channel MOSFET Transistor
2SK3936
FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(M...
isc N-Channel MOSFET
Transistor
2SK3936
FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 250mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pluse
92
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.833
UNIT ℃/W
isc website:www.iscsemi.com
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID= 1mA VGS= 10V; ID= 11.5A VGS= ±25V;VDS= 0 VDS= 500V; VGS= 0 IS= 23A; VGS= 0
2SK3936
MIN MAX UNIT
500
--
V
2.0
4.0
V
--
250
mΩ
--
±10
uA
--
500
uA
--
1.7
V
NOTICE: ISC reserves the rights to make changes of t...