isc N-Channel MOSFET Transistor
2SK3943-ZP
FEATURES ·Drain Current : ID= 82A@ TC=25℃ ·Drain Source Voltage
: VDSS= 40V...
isc N-Channel MOSFET
Transistor
2SK3943-ZP
FEATURES ·Drain Current : ID= 82A@ TC=25℃ ·Drain Source Voltage
: VDSS= 40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
82
A
IDM
Drain Current-Single Pluse
328
A
PD
Total Dissipation @TC=25℃
104
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.2
UNIT ℃/W
isc website：www.iscsemi.com
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 1mA
VDS= 10V; ID= 1mA VGS= 10V; ID= 41A VGS= 5.5V; ID= 41A VGS= ±20V;VDS= 0
VDS= 40V; VGS= 0
IS= 82A; VGS= 0
2SK3943-ZP
MIN MAX UNIT
40
--
V
2.0
3.0
V
--
3.5 5.6
mΩ
--
±10
uA
--
1.0
uA
--
1.5
V
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