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2SK3979-I Datasheet, Equivalent, MOSFET Transistor.

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part 2SK3979-I
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3979 -I FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 550mΩ(Max) @VGS=10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 200 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 6.
0 A IDM Drain C urrent-Single Pluse 24 A .
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3979-I Datasheet
Part 2SK3979-I
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3979 -I FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 550mΩ(Max) @VGS=10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 200 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 6.
0 A IDM Drain C urrent-Single Pluse 24 A .
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3979-I Datasheet

2SK3979-I

2SK3979-I
2SK3979-I

2SK3979-I

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