2SK412

isc N-Channel MOSFET Transistor 2SK412 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 15V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 15 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID= 1.0mA VGS= 15V; ID= 5.0A VGS= ±20V;VDS= 0 VDS= 200V; VGS= 0 IS= 5.0A; VGS= 0 2SK412 MIN MAX UNIT 250 -- V 2.0 5.0 V -- 0.4 Ω -- ±1.0 uA -- 1.0 mA -- 1.7 V NOTICE： ISC reserves the rights to make changes of th...