2SK3272L

isc N-Channel MOSFET Transistor 2SK3272L FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @VGS= 40V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 320 A PD Total Dissipation @TC=25℃ 135 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.93 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 1mA VGS= 40V; ID= 40A VGS= ±30V;VDS= 0 VDS= 60V; VGS= 0 IS=80A; VGS= 0 2SK3272L MIN MAX UNIT 60 -- V 2.5 2.5 V -- 6.5 mΩ -- ±0.1 uA -- 0.1 mA -- 1.5 V NOTICE： ISC reserves the rights to make changes of the c...