2SK3537-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown ...
2SK3537-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
V
VDSX *5
130
V
Continuous drain current
ID
±33
A
Pulsed drain current
ID(puls]
±132
A
Gate-source voltage
VGS
±20
V
Repetitive or non-repetitive
IAR *2
33
A
Maximum Avalanche Energy
EAS *1
169
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt Max. power dissipation
dV/dt *3 PD Ta=25°C
Tc=25°C
5 2.16 53
kV/µs W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=0.228mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C *4 VDS =<150V *5 VGS=-20V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Symbol V(BR)DSS VGS(th)
IDSS
IGSS RDS(on)
Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ...
