2SK3561 | Inchange Semiconductor
N-Channel MOSFET Transistor, isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID.
N-Channel MOSFET Transistor, isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATING.
- 2SK3561 | Inchange Semiconductor
- N-Channel MOSFET Transistor
- Download 2SK3561 Datasheet
- isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Vol.
- isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
D.
- 2SK3561 | Toshiba
- Silicon N-Channel MOSFET
- Download 2SK3561 Datasheet
- 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regu.
- 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source .
