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2SK3571-Z Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | 2SK3571-Z |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pluse 144 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK3571-Z |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pluse 144 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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