2SK4144

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ Note 2SK4144-S12-AZ Note LEAD PLATING Sn-Ag-Cu PACKING Vinyl bag 200 p/bag Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE Isolated TO-220 typ. 2.2 g FEATURES Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) Low input capacitance Ciss = 5500 pF TYP. (VDS = 10 V) Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Tstg Repetitive Avalanche Current Note2 IAR Repetitive Avalanche Energy Note2 EAR 60 V ±20 V ±70 A ±280 A 35 W 2.0 W 150 °C −55 to +150 °C 49.5 A 245 mJ (Isolated TO-220) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 3.57 62.5 °C/W °C/W The information in this document is subject to change witho...