isc N-Channel MOSFET Transistor
FDB2710
FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(M...
isc N-Channel MOSFET
Transistor
FDB2710
FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 42.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
50
A
IDM
Drain Current-Single Pluse
150
A
PD
Total Dissipation @TC=25℃
260
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.48
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 25A VGS= ±30V;VDS= 0 VDS= 250V; VGS= 0 IS= 50A; VGS= 0
FDB2710
MIN MAX UNIT
250
--
V
3.0
5.0
V
--
42.5 mΩ
--
±0.1
uA
--
1.0
uA
--
1.2
V
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