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FDP33N25 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part | FDP33N25 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
FDP33N2 5
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-Res istance
: RDS(on) = 94mΩ(Max) ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device
performance and reliable operation
DESCRIPTION ·m otor drive, DC-DC converter, power swit ch
and solenoid drive. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 250 V VGS Gate-Source Voltage-Con tinuous ±30 V ID Drain Current-Con tinuous 33 A PD Total Dissipation @ TC=25℃ 132 W TJ Max. O . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | FDP33N25 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
FDP33N2 5
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-Res istance
: RDS(on) = 94mΩ(Max) ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device
performance and reliable operation
DESCRIPTION ·m otor drive, DC-DC converter, power swit ch
and solenoid drive. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag e 250 V VGS Gate-Source Voltage-Con tinuous ±30 V ID Drain Current-Con tinuous 33 A PD Total Dissipation @ TC=25℃ 132 W TJ Max. O . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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