FMW60N070S2HF

FMW60N070S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Equivalent circuit schematic ②Drain ①②③ ① Gate ③Source Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Continuous Diode Forward Current Pulsed Diode Forward Current Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAS EAS dVDS/dt ISD ISDP dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Maximum duty cycle D=0.55 Note *2 : Limited by maximum channel temperature. Note *3 : Tch≤150°C, See Fig.1 and Fig.2 Note *4 : S‌ tarting Tch=25°C, IAS=3.8A, L=166mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *5 : ISD≤39.4A, -di/dt≤100A/μs, VDS peak≤ 600V, Tch≤150°C. Note *6 : ISD≤39.4A, dV/dt≤15V/ns, VDS peak≤ 600V, Tch≤150°C. Characteristics 600 600 53.2 33.6 158 ±30 6.3 1305 50 53.2 33.6 158 15 100 2.5 270 150 -55 to +150 Unit V V A A A V A mJ V/ns A A A V/ns A/μs W °C °C Remarks VGS=-30V TC=25°C Note*1,2 TC=100°CNote*1,2 Note *2 Note *3 Note *4 VDS≤ ...