FQP9N30

FQP9N30 N-Channel QFET) MOSFET 300 V, 9.0 A, 450 mW Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 17 nC) Low Crss (Typ. 16 pF) 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) VDSS ID IDM VGSS EAS IAR EAR dv/dt 300 V 9.0 A 5.7 A 36 A ±30 V 420 mJ 9.0 A 9.8 mJ 4.5 V/ns Power Dissipation (TC = 25°C) PD − Derate above 25°C 98 W 0.78 W/°C Operating and Storage Temperature Range TJ, TSTG −55 to +150 °C Maximum Lead Temperature for Solder- TL ing, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionali...