FQA9N90-F109

FQA9N90-F109 — N-Channel QFET® MOSFET FQA9N90-F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Features 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A Low Gate Charge (Typ. 55 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds S FQA9N90-F109 900 8.6 5.45 34.4 ± 30 900 8.6 24 4.0 240 1.92 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal R...