FQB5N90

FQB5N90 — N-Channel QFET® MOSFET FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Features 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, Description ID = 2.7 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 13 pF) technology has been especially tailored to reduce on-state 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are RoHS Compliant suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) S FQB5N90TM 900 5.4 3.42 21.6 ± 30 660 5.4 15.8 4.0 3.13 158 1.27 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symb...