N-Channel MOSFET
FQB5N90 — N-Channel QFET® MOSFET
FQB5N90
N-Channel QFET® MOSFET
900 V, 5.4 A, 2.3 Ω
Features
• 5.4 A, 900 V, RDS(on...
Description
FQB5N90 — N-Channel QFET® MOSFET
FQB5N90
N-Channel QFET® MOSFET
900 V, 5.4 A, 2.3 Ω
Features
5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,
Description
ID = 2.7 A
This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 31 nC)
produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
Low Crss (Typ. 13 pF)
technology has been especially tailored to reduce on-state 100% Avalanche Tested
resistance, and to provide superior switching performance and high avalanche energy strength. These devices are
RoHS Compliant
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D D
G S
D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
S
FQB5N90TM 900 5.4 3.42 21.6 ± 30 660 5.4 15.8 4.0 3.13 158 1.27
-55 to +150
300
Unit V A A A V mJ A mJ
V/ns W W
W/°C °C
°C
Thermal Characteristics
Symb...
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