FQB8N90C

FQB8N90C — N-Channel QFET® MOSFET FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. December 2013 Features 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V Low Gate Charge (Typ. 35 nC) Low Crss (Typ. 12 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate Above 25°C (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. FQB8N90CTM 900 6.3 3.8 25 ± 30 850 6.3 17.1 4.0 171 1.37 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal R...