N-Channel MOSFET
MOSFET - N-Channel QFET)
600 V, 3.4 W, 3.0 A
FQP3N60C
General Description This N−Channel enhancement mode power MOSFET ...
Description
MOSFET - N-Channel QFET)
600 V, 3.4 W, 3.0 A
FQP3N60C
General Description This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
3.0 A, 600 V, RDS(on) = 3.4 W (Max.) at VGS = 10 V, ID = 1.5 A Low Gate Charge (Typ. 10.5 nC) Low Crss (Typ. 5.0 pF) 100% Avalanche Tested This is a Pb−Free Device
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain−Source Voltage
600
VGSS Gate−Source Voltage
±30
ID
Drain Current Continuous (TC = 25°C)
3
Continuous (TC = 100°C)
1.8
IDM
Drain Current Pulsed (Note 1)
12
EAS
Single Pulse Avalanche Energy (Note 2)
150
IAR
Avalanche Current (Note 1)
3
EAR Repetitive Avalanche Energy (Note 1)
7.5
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V V A
A mJ A mJ V/ns
PD
Power
(TC = 25°C)
Dissipation
Derate above 25°C
75
W
0.62
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to
°C
+150
TL
Maximum Lead Temperature for
300
°C
Soldering, 1/8″ from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits a...
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