NVBG190N65S3F

MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 190 mW, 20 A NVBG190N65S3F Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. In addition, the D2PAK 7 lead package offers Kelvin sense. This allows higher switching speeds and gives designers the ability to reduce the overall application footprint. Features 700 V @ TJ = 150°C Typ. RDS(on) = 158 mW Ultra Low Gate Charge (Typ. Qg = 36 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 339 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications Automotive On Board Charger Automotive DC/DC Converter for BEV DATA SHEET www.onsemi.com V(BR)DSS 650 V RDS(ON) MAX 190 mW @ 10 V ID MAX 20 A Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pins 3, 4, 5, 6, 7) N−CHANNEL MOSFET D2PAK−7L CASE 418BJ MARKING DIAGRAM VBG190 N65S3F AYWWZZ VBG190N65S3F = Specific Dev...