NVBLS1D7N10MC

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 mW, 265 A NVBLS1D7N10MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable Lowers Switching Noise/EMI These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 265 A 187 303 W 152 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 32.4 A 22.9 4.5 W 2.3 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23.7 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 233 A EAS 2716 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.49 °C/W Junction−to−Ambient − Steady State (N...