N-Channel MOSFET
MOSFET - Power, Single N-Channel, TOLL
100 V, 1.8 mW, 265 A
NVBLS1D7N10MC
Features
• Low RDS(on) to Minimize Conduction...
Description
MOSFET - Power, Single N-Channel, TOLL
100 V, 1.8 mW, 265 A
NVBLS1D7N10MC
Features
Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable Lowers Switching Noise/EMI These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
265
A
187
303 W
152
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
32.4 A
22.9
4.5
W
2.3
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23.7 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
233
A
EAS
2716 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.49 °C/W
Junction−to−Ambient − Steady State (N...
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