NVCR4LS2D8N08M7A

DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 2.8 mW NVCR4LS2D8N08M7A Features Typical RDS(on) = 2.2 mW at VGS = 10 V Typical Qg(tot) = 86 nC at VGS = 10 V AEC−Q101 Qualified RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2162 4953 × 2413 4933 ±15 × 2393 ±15 4748.7 × 2184.6 427.1 × 549.5 101.6 ±19.1 ORDERING INFORMATION Device NVCR4LS2D8N08M7A Package Wafer Sawn on Foil RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 40 to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C. Symbol Parameter Condition Min Typ Max Unit BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V IDSS Drain to Source Leakage Current VDS = 80 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2.0 − 4.0 V *RDS(on) Bare Die Drain to Source On Resistance ID = 5 A, VGS = 10 V − 2.2 2.8 mW VSD Source to Drain Diode Voltage ISD = 5 A, VGS = 0 V − − 1.2 V EAS Single Pulse Drain−to−Source Avalanche Energy L = 6 mH, IAS = 18.7 A 1049 − − mJ *Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test ...