NVCW3SS0D5N03CLA

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 30 V, 0.52 mW NVCW3SS0D5N03CLA Features Typical RDS(on) = 0.43 mW at VGS = 10 V Typical Qg(tot) = 139 nC at VGS = 10 V AEC−Q101 Qualified RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 3683 x 3000 80 3462 x 2708 200 x 200 76.2 Gate: AlCu Source: Ti−NiV−Ag Drain: Ti−Ni−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Bad dice identified in Inking Gross Die Count: 2458 ORDERING INFORMATION Device NVCW3SS0D5N03CLA Package Unsawn wafer on ring frame RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 44% to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C Symbol Parameter Condition Min Typ Max Unit BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 − − V IDSS Drain to Source Leakage Current VDS = 24 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V − − 100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 1.3 − 2.2 V RDS(on)* Bare Die Drain to Source On Resistance ID = 30 A, VGS = 10 V − 0.43 0.52 mW ID = 30 A, VGS = 4.5 V − 0.68 0.85 mW *Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max RDS(on) specification is defined from the historical performance of the die in package but is not guaran...