NVMFS9D6P04M8L

DATA SHEET www.onsemi.com MOSFET - Power, Single P-Channel -40 V, 9.5 mW, -77 A NVMFS9D6P04M8L Features Small Footprint for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFWS9D6P04M8L − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 4) Power Dissipation RqJC (Notes 1, 2) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C −77.0 A −54.4 75 W 38 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID −17.1 A Steady TA = 100°C −12.1 State TA = 25°C PD 3.7 W TA = 100°C 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 450 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = −8.5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS −62 A EAS 259 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter ...